Anisotropy of electron mobility in arbitrarily oriented FinFETs

We simulated the behavior of electron mobility and the effect of volume inversion in FinFETs with different surface (hkl) orientations and channel <hkl> directions, using a Monte Carlo simulator. For each surface orientation, different channel directions were also considered. In the case of the (110) surface, a strong anisotropy of electron mobility with channel direction was seen: when the channel was in the (110)/<001> direction, electron mobility was 50% higher than in (110)/<1-10>, and was similar to the mobility for a (100)/<001> direction. This anisotropic behavior with channel orientation was not observed in the (100)-or (111)-surface orientations. The study with silicon thickness also revealed some interesting consequences of the volume inversion effect.