New fabrication method and emission characteristics of silicon field emitters

Author

Hashiguchi, Gen ; Sakamoto, Hikaru ; Kanazawa, Satoshi ; Mimura, Hidenori

Author_Institution

Electron. Res. Lab., Nippon Steel Corp., Kanagawa, Japan

fYear

1994

fDate

6-10 Nov. 1994

Firstpage

38

Lastpage

42

Abstract

A new fabrication method of silicon field emitters has been proposed, which combines the Si KOH anisotropic etching and local-oxidation of silicon (LOCOS) techniques to form the emitter tip. Wedge-shaped and conical-shaped silicon emitters fabricated using this technique had an extremely well-defined structure indicative of good reproducibility and uniformity of the fabrication process. The emission characteristics have been examined under UHV conditions and it has been revealed that both the anode and gate currents are governed by the Fowler-Nordheim mechanism and show an excellent emission characteristic.<>

Keywords

electron field emission; elemental semiconductors; etching; oxidation; semiconductor technology; silicon; vacuum microelectronics; Fowler-Nordheim mechanism; LOCOS; Si; Si KOH anisotropic etching; UHV conditions examination; conical-shaped silicon emitters; emission characteristics; emitter tip; fabrication method; local-oxidation; silicon field emitters; wedge-shaped silicon emitters; Anisotropic magnetoresistance; Chromium; Etching; Fabrication; Laboratories; Microelectronics; Oxidation; Reproducibility of results; Scanning electron microscopy; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Technologies and Factory Automation, 1994. ETFA '94., IEEE Symposium on

Conference_Location

Tokyo, Japan

Print_ISBN

0-7803-2114-6

Type

conf

DOI

10.1109/ETFA.1994.402026

Filename

402026