• DocumentCode
    2781393
  • Title

    Theoretical analysis of XtreMOS™ power transistors

  • Author

    Roig, J. ; Desoete, B. ; Moens, P. ; Tack, M.

  • Author_Institution
    AMI Semicond. Belgium BVBA, Oudenaarde
  • fYear
    2007
  • fDate
    11-13 Sept. 2007
  • Firstpage
    422
  • Lastpage
    425
  • Abstract
    This work provides a new theoretical approach addressed to the XtreMOSTM and equivalent structures. An analytical sRonxBVdss model is provided to demonstrate the superior electrical performance of XtreMOSTM structure in the domain of the high power MOSFETs at medium voltage capability (50-200 V). Moreover, geometrical and technological parameters can be easily optimized by means of simple expressions. In order to support and validate the theoretical approach, numerical simulation and experimental data are included.
  • Keywords
    equivalent circuits; power transistors; XtreMOSTM; equivalent structures; geometrical parameters; high power MOSFET; medium voltage capability; power transistors; technological parameters; voltage 50 V to 200 V; Ambient intelligence; Analytical models; Dielectric breakdown; Electric breakdown; MOSFETs; Performance analysis; Power transistors; Silicon; Technological innovation; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
  • Conference_Location
    Munich
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-1123-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2007.4430968
  • Filename
    4430968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2781393