Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs

In this work, a detailed analysis of capacitance behavior of high voltage MOSFET (HV-MOS) e.g. LDMOS, VDMOS using device simulation is made. The impact of lateral non-uniform doping and drift region is separately analyzed. It is shown that the peaks in C_GD and C_GS capacitances of HV-MOS originate from lateral non-uniform doping. The drift region decreases the C_GD capacitance and increases the peaks in C_GS and also gives rise to peaks in C_GG capacitances increasing with higher drain bias. It is also shown that trapped charge due to hot carrier degradation modulates (or introduce) the peaks amplitude and position in capacitances depending on hot hole or electron injection at drain or source side. This capacitance analysis will facilitate in optimization of the HV-MOS structure and also help in modeling of HV-MOS, including the hot carrier degradation.