Low noise PHEMT and its MMIC LNA implementation for C-band applications

Author

Choi, B.G. ; Lee, Y.S. ; Yoon, K.S. ; Seo, H.C. ; Park, C.S.

Author_Institution

Sch. of Eng., Information & Commun. Univ., Taejon, South Korea

fYear

2000

fDate

2000

Firstpage

56

Lastpage

59

Abstract

We have designed and fabricated an MMIC low noise amplifier for 6 GHz band applications using 0.25 μm gate length AlGaAs-InGaAs-GaAs pseudomorphic high electron mobility transistors. The two-stage LNA is designed to meet the noise requirements for high data rate C-band wireless LAN, DSRC, and multi-purpose ISM band applications. The input stage was designed to provide a simultaneous noise and impedance match by adjusting both gate width and series feedback inductance at the source, and the inter-stage and the output stage were matched to 50 Ω. The on-chip matched LNA shows noise figure less than 0.88 dB, gain greater than 16 dB, and return loss less than -10 dB at 6 GHz range

Keywords

HEMT integrated circuits; MMIC amplifiers; field effect MMIC; high electron mobility transistors; impedance matching; integrated circuit design; integrated circuit noise; microwave field effect transistors; semiconductor device noise; -10 dB; 0.25 micron; 0.88 dB; 16 dB; 6 GHz; AlGaAs-InGaAs-GaAs; C-band applications; DSRC applications; MMIC LNA implementation; MMIC low noise amplifier; SHF; high data rate wireless LAN applications; high electron mobility transistors; low noise PHEMT; multi-purpose ISM band applications; onchip matched LNA; pseudomorphic HEMT; series feedback inductance; simultaneous noise/impedance matched input stage; two-stage LNA design; Electron mobility; HEMTs; Impedance; Inductance; Low-noise amplifiers; MMICs; MODFETs; Output feedback; PHEMTs; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000

Conference_Location

Beijing

Print_ISBN

0-7803-5743-4

Type

conf

DOI

10.1109/ICMMT.2000.895619

Filename

895619