Influence of Photolithography Mistakes on Characteristics of Ftsp Transducer

An influence of photolithography mistakes which are arisen as a result of planar shift of aluminum terminals formed on the surface of silicon chip is described. The planar shift of these terminals away from one of symmetry axis of Greek Cross shaped Four-Terminal Silicon Piezoresistive (FTSP) Transducer is considered. Some physical features of anisotropic behavior of deformed silicon under the applied mechanical pressure are taken into consideration. Both cases of power supplying of FTSP transducer with constant voltage supply and constant current supply are analyzed. All calculations were carried out with Couple-Field Finite-Element Method (FEM) realized in ANSYS^TMsoftware. It follows from calculations that photolithography mistakes can bring a significant investment into the deviation of characteristics of FTSP transducer.