DocumentCode
2781720
Title
Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells
Author
Bertoni, M.I. ; Hudelson, S. ; Newman, B.K. ; Bernardis, S. ; Fenning, D.P. ; Dekkers, H.F.W. ; Cornagliotti, E. ; Zuschlag, A. ; Micard, G. ; Hahn, G. ; Coletti, G. ; Lai, B. ; Buonassisi, T.
Author_Institution
Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2010
fDate
20-25 June 2010
Abstract
In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating mm-wide bare and SiNx-coated stripes using laser beam-induced current (LBIC), electron backscatter diffraction (EBSD), synchrotron-based X-ray fluorescence microscopy (μ-XRF), and defect etching to correlate pre- and post-hydrogenation recombination activity with grain boundary character, density of iron-silicide nanoprecipitates, and dislocations. This study reveals that the microstructure of boundaries that passivate well and those that do not differ mostly in the character of the dislocations along the grain boundary, while iron silicide precipitates along the grain boundaries (above detection limits) were found to play a less significant role.
Keywords
OBIC; electron backscattering; elemental semiconductors; grain boundaries; silicon; solar cells; μ-XRF; EBSD; LBIC; Si; defect etching; electron backscatter diffraction; grain boundaries; hydrogen passivation effectiveness; iron-silicide nanoprecipitates; laser beam-induced current; multicrystalline silicon solar cells; post-hydrogenation recombination activity; prehydrogenation recombination activity; synchrotron-based X-ray fluorescence microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5616904
Filename
5616904
Link To Document