• DocumentCode
    2781720
  • Title

    Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells

  • Author

    Bertoni, M.I. ; Hudelson, S. ; Newman, B.K. ; Bernardis, S. ; Fenning, D.P. ; Dekkers, H.F.W. ; Cornagliotti, E. ; Zuschlag, A. ; Micard, G. ; Hahn, G. ; Coletti, G. ; Lai, B. ; Buonassisi, T.

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating mm-wide bare and SiNx-coated stripes using laser beam-induced current (LBIC), electron backscatter diffraction (EBSD), synchrotron-based X-ray fluorescence microscopy (μ-XRF), and defect etching to correlate pre- and post-hydrogenation recombination activity with grain boundary character, density of iron-silicide nanoprecipitates, and dislocations. This study reveals that the microstructure of boundaries that passivate well and those that do not differ mostly in the character of the dislocations along the grain boundary, while iron silicide precipitates along the grain boundaries (above detection limits) were found to play a less significant role.
  • Keywords
    OBIC; electron backscattering; elemental semiconductors; grain boundaries; silicon; solar cells; μ-XRF; EBSD; LBIC; Si; defect etching; electron backscatter diffraction; grain boundaries; hydrogen passivation effectiveness; iron-silicide nanoprecipitates; laser beam-induced current; multicrystalline silicon solar cells; post-hydrogenation recombination activity; prehydrogenation recombination activity; synchrotron-based X-ray fluorescence microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5616904
  • Filename
    5616904