18.5% laser-doped solar cell on CZ p-type silicon

For many years, the selective emitter approach has been well-known to yield cell efficiencies well above those achieved by conventional screen-printed cells. A simple and effective way of forming a selective emitter can be achieved by laser doping to simultaneously pattern the dielectric with openings as narrow as 8 μm, and create heavy doping beneath the metal contacts. In conjunction with laser doping, light-induced plating (LIP) is seen as an attractive approach for forming metal contacts on the laser-doped regions, without the need for aligning masks or other expensive, long laboratory processes. As laser-doping is gaining increasing interests in the PV industry, selection of the most appropriate laser and processing conditions is important to ensure high yields in a production environment. In this work, we have identified a suitable laser that enables good ohmic contacts for a wide range of laser scan speeds. Sheet resistances of laser-doped lines as low as 2 ohms/sq was achieved at a scan speeds of <;1 m/s, while a sufficiently high doping (~20 ohms/sq) is still achievable at scan speeds up to 6 m/s. Optimization of the laser parameters in this work lead to a cell efficiency of 18.5% being achieved with the laser-doped selective emitter (LDSE) structure. The cell also has an excellent pseudo fill factor (pFF) of 82.3% and a local ideality factor n nearing unity. This indicates there is minimal laser-induced damage and junction recombination as a result of the laser doping process.