Title :
Modelling the noise properties of pseudomorphic HEMTS
Author :
Taylor, R.I. ; Holden, A.J.
Author_Institution :
Plessey Res. Caswell, Towcester, UK
Abstract :
The limitations of Fukui´s equation in predicting Fmin for very low noise PSHEMTs, and/or at high frequencies has been discussed. The limits to PSHEMT noise performance are due to the intrinsic channel noise of the carriers, and the variation of this ultimate noise limit has been calculated for various gate lengths and frequencies. Finally, it has been shown that decreasing the parasitic resistances causes a decrease in the sensitivity of the PSHEMT noise figure to variations about the low noise bias point
Keywords :
electron device noise; high electron mobility transistors; semiconductor device models; solid-state microwave devices; carriers; gate lengths; high frequencies; intrinsic channel noise; modelling; noise limit; noise properties; parasitic resistances; pseudomorphic HEMTS;
Conference_Titel :
Millimetre Wave Transistors and Circuits, IEE Colloquium on
Conference_Location :
London
