• DocumentCode
    278206
  • Title

    Modelling the noise properties of pseudomorphic HEMTS

  • Author

    Taylor, R.I. ; Holden, A.J.

  • Author_Institution
    Plessey Res. Caswell, Towcester, UK
  • fYear
    1991
  • fDate
    33324
  • Firstpage
    42491
  • Lastpage
    42494
  • Abstract
    The limitations of Fukui´s equation in predicting Fmin for very low noise PSHEMTs, and/or at high frequencies has been discussed. The limits to PSHEMT noise performance are due to the intrinsic channel noise of the carriers, and the variation of this ultimate noise limit has been calculated for various gate lengths and frequencies. Finally, it has been shown that decreasing the parasitic resistances causes a decrease in the sensitivity of the PSHEMT noise figure to variations about the low noise bias point
  • Keywords
    electron device noise; high electron mobility transistors; semiconductor device models; solid-state microwave devices; carriers; gate lengths; high frequencies; intrinsic channel noise; modelling; noise limit; noise properties; parasitic resistances; pseudomorphic HEMTS;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Millimetre Wave Transistors and Circuits, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    181367
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=278206