DocumentCode
278207
Title
Heterojunction bipolar transistors for millimetre wave applications
Author
Topham, P.J. ; Dearn, A
Author_Institution
Plessey Res. Caswell Ltd., Towcester, UK
fYear
1991
fDate
33324
Firstpage
42522
Lastpage
42525
Abstract
The authors´ aim is to show the advantages of the heterojunction bipolar transistor (HBT) for applications at MM-wave frequencies; particularly where it complements the HEMT. The applications highlighted are low phase noise oscillators and high efficiency output stages. The GaAs-GaAlAs HBT combines the bipolar advantages of high transconductance, low output conductance and freedom from flicker noise, with the semi-insulating substrate and high electron mobility of GaAs
Keywords
heterojunction bipolar transistors; microwave oscillators; solid-state microwave devices; GaAs-GaAlAs; HBT; MM-wave frequencies; heterojunction bipolar transistor; high efficiency output stages; low phase noise oscillators; microwave transistors; millimetre wave applications;
fLanguage
English
Publisher
iet
Conference_Titel
Millimetre Wave Transistors and Circuits, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
181368
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