Title :
IEE Colloquium on `Millimetre Wave Transistors and Circuits´ (Digest No.068)
Abstract :
The following topics were dealt with: MM-wave IC and transistor developments; carrier confinement and overshoot velocities in GaAs and InP based HEMTs; dual gate cascode MESFETs and HEMTs; modelling of pseudomorphic HEMT noise properties; heterojunction bipolar transistors for millimetre wave applications; MM-wave diode mounting design; design of stabilised microstrip transistor oscillator; LNA utilising advanced thin film techniques; negative resistance, low noise, reflection mode transistor amplifiers; and hybrid 2-40 GHz high power distributed amplifier
Keywords :
Schottky gate field effect transistors; electron device noise; heterojunction bipolar transistors; high electron mobility transistors; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; microwave oscillators; semiconductor device models; solid-state microwave circuits; solid-state microwave devices; thin film circuits; GaAs; HBT; InP; LNA; MM-wave IC; carrier confinement; diode mounting design; dual gate cascode MESFETs; heterojunction bipolar transistors; hybrid distributed amplifier; low noise; microwave circuits; microwave devices; millimetre wave applications; modelling; negative resistance; noise properties; overshoot velocities; pseudomorphic HEMT; reflection mode; stabilised microstrip transistor oscillator; thin film techniques; transistor amplifiers;
Conference_Titel :
Millimetre Wave Transistors and Circuits, IEE Colloquium on
Conference_Location :
London
