Title :
High-Q poly-to-poly capacitor design for RF applications
Author :
Lee, Jin-Taek ; Choi, Jeong-Ki ; Lee, Sang-Gug
Author_Institution :
Inf. and Commun. Univ, Daejon, South Korea
Abstract :
A very high-Q poly-to-poly capacitor structure and the measurement results are presented. The poly-to-poly capacitor is designed on a conventional 0.35 μm CMOS process. Through the layout optimization, a Q-factor greater than 120 is obtained at 2 GHz
Keywords :
CMOS integrated circuits; Q-factor; UHF integrated circuits; capacitors; equivalent circuits; 0.35 micron; 2 GHz; CMOS process; Q-factor; RF applications; high-Q capacitor design; layout optimization; poly-to-poly capacitor design; Abstracts; Availability; CMOS process; CMOS technology; Capacitors; Equivalent circuits; Parasitic capacitance; Q factor; Radio frequency; Silicon;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000
Conference_Location :
Beijing
Print_ISBN :
0-7803-5743-4
DOI :
10.1109/ICMMT.2000.895655
