Title :
A X-band five-bit MMIC phase shifter
Author :
Ya, Shen ; Tangsheng, Chen ; Lanfeng, Lin ; Xiaojian, Chen ; Jinting, Lin
Author_Institution :
Nanjing Electron. Devices Inst., China
Abstract :
Design, fabrication and performance of a X-band 5-bit GaAs MMIC phase shifter are described. It exhibits low RMS phase error (<1.7 degrees), good VSWR (<1.3), low insertion loss (<8.3 dB) and low insertion loss variation (<±0.5 dB) for all thirty-two phase states over the entire operational bandwidth in the 9.2~10.3 GHz frequency range
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC phase shifters; field effect MMIC; gallium arsenide; integrated circuit design; 8.3 dB; 9.2 to 10.3 GHz; GaAs MMIC; MESFET; RMS phase error; VSWR; X-band phase shifter; fabrication; five-bit MMIC phase shifter; insertion loss; Circuits; Costs; FETs; Fabrication; Frequency; Insertion loss; MMICs; Phase shifters; Phased arrays; Spirals;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000
Conference_Location :
Beijing
Print_ISBN :
0-7803-5743-4
DOI :
10.1109/ICMMT.2000.895656
