Title :
A 9 W C-band MMICs combined power amplifier
Author :
Tangsheng, Chen ; Ya, Shen ; Fuxiao, Li ; Xiaojian, Chen
Author_Institution :
Nanjing Electron. Devices Inst., China
Abstract :
The design, fabrication and performance of a two-stage C-band MMIC power amplifier is reported in this paper. The MMIC contains monolithic input and interstage matching. The matching at the output is realized by using off-chip circuitry. The amplifier delivers more than 36.6 dBm output power with 18.6 dB gain and 34% power added efficiency (PAE) across the band of 5.2-5.8 GHz with a CW signal applied. A 2-chip combined power amplifier demonstrates output power of 39.6 dBm (9 W), with 18.6 dB gain and 32% PAE over the same band
Keywords :
MMIC power amplifiers; field effect MMIC; gallium arsenide; hybrid integrated circuits; impedance matching; integrated circuit design; power integrated circuits; 18.6 dB; 32 percent; 34 percent; 5.2 to 5.8 GHz; 9 W; C-band MMIC power amplifier; GaAs; GaAs HFET; SHF; fabrication; input matching; interstage matching; two-chip hybrid power amplifier; two-stage power amplifier; Circuits; FETs; Gallium arsenide; HEMTs; Impedance matching; MMICs; MODFETs; Microwave amplifiers; Power amplifiers; Power generation;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000
Conference_Location :
Beijing
Print_ISBN :
0-7803-5743-4
DOI :
10.1109/ICMMT.2000.895657
