Title :
Influence of Hydrogen Permeability of Liner Nitride Film on Program/Erase Endurance of Split-Gate Type Flash EEPROMS
Author :
Liu, Ziyuan ; Fujieda, Shinji ; Hayashi, Fumihiko ; Shimizu, Masakuni ; Nakata, Masashi ; Ishigaki, Hirokazu ; Wilde, Markus ; Fukutani, Katsuyuki
Author_Institution :
Test & Anal. Eng. Div., NEC Electron. Corp., Kanagawa
Abstract :
The paper demonstrates that H atoms diffused into the CVD tunnel oxide degrade the endurance of split-gate type flash EEPROMs. The authors observed that F-N stress application generates high trap densities at the tunnel-oxide/FG interface as well as negative charges in the tunnel oxide. The density of FN-induced traps and charges was found to strongly depend on the liner nitride (SiN) film quality. Nuclear reaction analysis revealed a difference in H permeability between LPCVD-SiN and plasma SiN liner films, allowing us to correlate H atoms and the endurance degradation.
Keywords :
chemical vapour deposition; electron traps; flash memories; hydrogen; interface states; permeability; silicon compounds; CVD tunnel oxide; FN stress; FN-induced traps; LPCVD; SiN; electron trapping; flash EEPROM; hydrogen atoms; hydrogen permeability; interface trap; liner nitride film; nuclear reaction analysis; plasma liner films; program/erase endurance; split-gate type; Degradation; EPROM; Electronic equipment testing; Hydrogen; National electric code; Nonvolatile memory; Permeability; Silicon compounds; Split gate flash memory cells; Stress; FLASH EEPROMs; NRA; P/E endurance; electron trapping; hydrogen permeability; interface trap; split-gate;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369891
