Title :
The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown
Author :
Nicollian, Paul E. ; Krishnan, Anand T. ; Chancellor, Cathy A. ; Khamankar, Rajesh B. ; Chakravarthi, Srinivasan ; Bowen, Chris ; Reddy, Vijay K.
Author_Institution :
Texas Instruments Inc., Dallas, TX
Abstract :
This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the most plausible explanation for the existence of a power law model for TDDB.
Keywords :
electric breakdown; anode hydrogen release; gate dielectric breakdown; low voltage trap generation; power law model; silicon-hydrogen bonds; vibrational excitation; Anodes; Breakdown voltage; Dielectric breakdown; Electric breakdown; Hydrogen; Instruments; Lead; Low voltage; Power generation; Silicon;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369892
