Title :
Optical Properties of Stranski-Krastanow and Strain-Free GaSb Quantum Dots on GaAs Substrates - Towards Sb-based Type-II Quantum Dot Emitters -
Author :
Tatebayashi, J. ; Balakrishnan, G. ; Huang, S.H. ; Khoshakhlagh, A. ; Mehta, M. ; Dawson, L.R. ; Huffaker, D.L.
Author_Institution :
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, USA, E-mail: tatebaya@chtm.unm.edu
Abstract :
We report the optical characteristics of type II GaSb quantum dot (QD) formation on GaAs by either Stranski-Krastanow (SK) or interfacial misfit (IMF) growth mode. The growth mode selection can be controlled by the gallium to antimony (III/V) ratio where a high III/V ratio produces IMF and a low III/V ratio establishes the SK growth mode. The IMF growth mode produces strain-free QDs emitting at 1.35 μm at room-temperature (RT), while the SK growth mode produces highly-strained QDs emitting at 1.18 μm at RT. We also demonstrate the fabrication of light-emitting diode (LED) structures containing five layers of GaSb/GaAs QDs using the IMF growth mode. Electroluminescence (EL) peak at 1.3 μm from the stacked QDs is observed at RT, which would be applicable to GaAs-based photonic devices for fiber-optic communication systems.
Keywords :
GaAs; GaSb; Stranski-Krastanow; interfacial misfit; lasers; light emitting diodes; quantum dots; Electroluminescent devices; Fiber lasers; Gallium arsenide; Light emitting diodes; Optical fiber communication; Optical fiber devices; Quantum dot lasers; Quantum dots; Stimulated emission; US Department of Transportation; GaAs; GaSb; Stranski-Krastanow; interfacial misfit; lasers; light emitting diodes; quantum dots;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247583
