Title :
Lifetime Prediction for CMOS Devices with Ultra Thin Gate Oxides Based on Progressive Breakdown
Author :
Kerber, A. ; Röhner, M. ; Pompl, T. ; Duschl, R. ; Kerber, M.
Author_Institution :
Qimonda AG, Munich
Abstract :
Progressive breakdown observed in CMOS devices with ultra thin gate oxides can significantly increase the time dependent dielectric breakdown (TDDB) reliability margin of digital CMOS products. The voltage acceleration, the failure distribution of the progressive breakdown and the methodology for quantification of the progressive breakdown is discussed. Extensive experimental data are provided, enabling its implementation
Keywords :
failure analysis; life testing; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; CMOS devices; digital CMOS products; failure distribution; lifetime prediction; progressive breakdown; time dependent dielectric breakdown reliability; ultra thin gate oxides; voltage acceleration; Acceleration; Breakdown voltage; CMOS logic circuits; CMOS technology; Dielectric breakdown; Dielectric measurements; Electric breakdown; Gate leakage; Leakage current; Stress;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369894
