Title :
Analytic Extension of the Cell-Based Oxide Breakdown Model to Full Percolation and its Implications
Author :
Krishnan, Anand T. ; Nicollian, Paul E.
Author_Institution :
Silicon Technol. Dev., Texas Instruments Inc., Dallas, TX
Abstract :
We extend the cell-based approach of Sune to full percolation that is predictive down to 0.4nm. We resolve conflicting reports in the literature on the scaling behavior of the Weibull shape parameter with oxide thickness, and show that Weibull statistics can be violated if pre-existing traps are present.
Keywords :
Weibull distribution; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; Weibull shape parameter; Weibull statistics; cell-based oxide breakdown model; full percolation; oxide reliability; oxide thickness; pre-existing traps; Active shape model; Dielectric breakdown; Electric breakdown; Instruments; Predictive models; Silicon; Solid modeling; Statistical analysis; Statistical distributions; Statistics; GOI; Percolation model; TDDB; oxide reliability;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369897
