DocumentCode
2783002
Title
Analytic Extension of the Cell-Based Oxide Breakdown Model to Full Percolation and its Implications
Author
Krishnan, Anand T. ; Nicollian, Paul E.
Author_Institution
Silicon Technol. Dev., Texas Instruments Inc., Dallas, TX
fYear
2007
fDate
15-19 April 2007
Firstpage
232
Lastpage
239
Abstract
We extend the cell-based approach of Sune to full percolation that is predictive down to 0.4nm. We resolve conflicting reports in the literature on the scaling behavior of the Weibull shape parameter with oxide thickness, and show that Weibull statistics can be violated if pre-existing traps are present.
Keywords
Weibull distribution; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; Weibull shape parameter; Weibull statistics; cell-based oxide breakdown model; full percolation; oxide reliability; oxide thickness; pre-existing traps; Active shape model; Dielectric breakdown; Electric breakdown; Instruments; Predictive models; Silicon; Solid modeling; Statistical analysis; Statistical distributions; Statistics; GOI; Percolation model; TDDB; oxide reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.369897
Filename
4227638
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