DocumentCode
2783139
Title
The Universality of NBTI Relaxation and its Implications for Modeling and Characterization
Author
Grasser, Tibor ; Gos, Wolfgang ; Sverdlov, Victor ; Kaczer, Ben
Author_Institution
Christian Doppler Lab. for TCAD, TU Wien
fYear
2007
fDate
15-19 April 2007
Firstpage
268
Lastpage
280
Abstract
As of date many NBTI models have been published which aim to successfully capture the essential physics. As such, these models have mostly focused on the stress phase. The relaxation phase, on the other hand, has not received as much attention, possibly because of the contradictory results published so far. Particularly noteworthy are the very long relaxation tails of almost logarithmic nature, which cannot be successfully described by the reaction-diffusion model. The authors argue that understanding the nature of the relaxation phase could hold the key to unraveling the underlying NBTI mechanism. In particular, the authors stipulate that the relaxation phase follows a universal relaxation law, demonstrate the valuable consequences resulting therefrom, and use this universality to classify presently available NBTI models.
Keywords
reaction-diffusion systems; semiconductor device models; semiconductor device reliability; stress relaxation; NBTI; negative biased temperature instability; reaction-diffusion model; relaxation phase; stress phase; CMOS technology; Delay; Interface states; Niobium compounds; Photonic band gap; Silicon; Stress; Temperature; Threshold voltage; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.369904
Filename
4227645
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