• DocumentCode
    2783139
  • Title

    The Universality of NBTI Relaxation and its Implications for Modeling and Characterization

  • Author

    Grasser, Tibor ; Gos, Wolfgang ; Sverdlov, Victor ; Kaczer, Ben

  • Author_Institution
    Christian Doppler Lab. for TCAD, TU Wien
  • fYear
    2007
  • fDate
    15-19 April 2007
  • Firstpage
    268
  • Lastpage
    280
  • Abstract
    As of date many NBTI models have been published which aim to successfully capture the essential physics. As such, these models have mostly focused on the stress phase. The relaxation phase, on the other hand, has not received as much attention, possibly because of the contradictory results published so far. Particularly noteworthy are the very long relaxation tails of almost logarithmic nature, which cannot be successfully described by the reaction-diffusion model. The authors argue that understanding the nature of the relaxation phase could hold the key to unraveling the underlying NBTI mechanism. In particular, the authors stipulate that the relaxation phase follows a universal relaxation law, demonstrate the valuable consequences resulting therefrom, and use this universality to classify presently available NBTI models.
  • Keywords
    reaction-diffusion systems; semiconductor device models; semiconductor device reliability; stress relaxation; NBTI; negative biased temperature instability; reaction-diffusion model; relaxation phase; stress phase; CMOS technology; Delay; Interface states; Niobium compounds; Photonic band gap; Silicon; Stress; Temperature; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    1-4244-0919-5
  • Electronic_ISBN
    1-4244-0919-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.2007.369904
  • Filename
    4227645