DocumentCode :
2783139
Title :
The Universality of NBTI Relaxation and its Implications for Modeling and Characterization
Author :
Grasser, Tibor ; Gos, Wolfgang ; Sverdlov, Victor ; Kaczer, Ben
Author_Institution :
Christian Doppler Lab. for TCAD, TU Wien
fYear :
2007
fDate :
15-19 April 2007
Firstpage :
268
Lastpage :
280
Abstract :
As of date many NBTI models have been published which aim to successfully capture the essential physics. As such, these models have mostly focused on the stress phase. The relaxation phase, on the other hand, has not received as much attention, possibly because of the contradictory results published so far. Particularly noteworthy are the very long relaxation tails of almost logarithmic nature, which cannot be successfully described by the reaction-diffusion model. The authors argue that understanding the nature of the relaxation phase could hold the key to unraveling the underlying NBTI mechanism. In particular, the authors stipulate that the relaxation phase follows a universal relaxation law, demonstrate the valuable consequences resulting therefrom, and use this universality to classify presently available NBTI models.
Keywords :
reaction-diffusion systems; semiconductor device models; semiconductor device reliability; stress relaxation; NBTI; negative biased temperature instability; reaction-diffusion model; relaxation phase; stress phase; CMOS technology; Delay; Interface states; Niobium compounds; Photonic band gap; Silicon; Stress; Temperature; Threshold voltage; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
Type :
conf
DOI :
10.1109/RELPHY.2007.369904
Filename :
4227645
Link To Document :
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