Title :
Drain Extended NMOS High Current Behavior and ESD Protection Strategy for HV Applications in Sub-100nm CMOS Technologies
Author :
Boselli, Gianluca ; Vassilev, Vesselin ; Duvvury, Charvaka
Author_Institution :
Silicon Technol. Dev., Texas Instruments, Dallas, TX
Abstract :
In this work the high current behavior of drain-extended nMOS transistors (DEnMOS) built in a state-of-the-art 65nm CMOS technology were investigated. It shown that a sufficient level of ESD robustness (I T2~2mA/mum) can be achieved through substrate biasing. The concept will be exploited to build robust ESD protections
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; 65 nm; CMOS technology; drain-extended nMOS transistors; electrostatic discharge protection; substrate biasing; CMOS technology; Diodes; Electrostatic discharge; Implants; MOS devices; MOSFETs; Protection; Robustness; Thyristors; Voltage; DEnMOS; ESD; USB2.0; state-of-art CMOS technology;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369913
