• DocumentCode
    2783313
  • Title

    Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies

  • Author

    Di Sarro, James ; Chatty, Kiran ; Gauthier, Robert ; Rosenbaum, Elyse

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL
  • fYear
    2007
  • fDate
    15-19 April 2007
  • Firstpage
    348
  • Lastpage
    357
  • Abstract
    The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. The authors also report that SCR turn-on time is highly dependent on the amplitude of the applied pulse.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; leakage currents; thyristors; 65 nm; 90 nm; CMOS technology; DC leakage current; electrostatic discharge protection; failure current; silicon controlled rectifier; Anodes; CMOS technology; Capacitance; Cathodes; Diodes; Electrostatic discharge; Leakage current; Protection; Thyristors; Trigger circuits; ESD protection circuits; Electrostatic discharge (ESD); Silicon Controlled Rectifier (SCR);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    1-4244-0919-5
  • Electronic_ISBN
    1-4244-0919-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.2007.369914
  • Filename
    4227655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2783313