Title :
Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies
Author :
Di Sarro, James ; Chatty, Kiran ; Gauthier, Robert ; Rosenbaum, Elyse
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL
Abstract :
The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. The authors also report that SCR turn-on time is highly dependent on the amplitude of the applied pulse.
Keywords :
CMOS integrated circuits; electrostatic discharge; leakage currents; thyristors; 65 nm; 90 nm; CMOS technology; DC leakage current; electrostatic discharge protection; failure current; silicon controlled rectifier; Anodes; CMOS technology; Capacitance; Cathodes; Diodes; Electrostatic discharge; Leakage current; Protection; Thyristors; Trigger circuits; ESD protection circuits; Electrostatic discharge (ESD); Silicon Controlled Rectifier (SCR);
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369914
