Title :
Study of Plasma Damage at Recess-Channel Gate (RG) Structure During Plasma Nitridation
Author :
Cho, Heung-Jae ; Kim, Tae-Yoon ; Jang, Se-Aug ; Ahn, Hyun ; Kim, Yong Soo ; Lim, Kwan-Yong ; Sung, Min Gyu ; Yang, Hong-Seon ; Pyi, Seung-Ho ; Kim, Jin Woong
Author_Institution :
R&D Div., Hynix Semicond. Inc., Kyoungki-do
Abstract :
The plasma induced damage of gate oxide was observed at the recess-channel gate (RG) transistor during the plasma nitridation, which is not observed at the 2-dimensional planar structure. The model of electron shading which is known as a topographical effect in plasma charging can explain the specific structure dependence of the plasma damage. The thinnest bottom gate oxide at the RG structure is found to be severe damaged by positive ions during the plasma nitridation
Keywords :
DRAM chips; nitridation; plasma materials processing; 2D planar structure; DRAM chips; electron shading; plasma charging; plasma induced damage; plasma nitridation; recess-channel gate transistor; Boron; Design for quality; Fluid flow; MOS capacitors; Nitrogen; Plasma properties; Random access memory; Roentgenium; Silicon; Transistors;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369917
