Reliability Investigations for Bulk-FinFETs Implementing Partially-Insulating Layer

This paper presents a detailed analysis of the reliability characteristics of partially-insulated FinFETs (PI-FinFETs) where a new source/drain structure was adapted using a pad-polysilicon side contact (PSC). The PSC structure shows excellent improvements in device performances mainly due to the increment of the contact area by using lateral faces of FinFETs. The hot carrier degradation characteristics are also improved in comparison with a conventional source/drain structure having planar contact. This is due to an advantageous impact ionization position. By applying PSC structure to Pi-FinFETs, an optimized source/drain structure of PI-FinFETs can be obtained with its own advantages.