DocumentCode
2783470
Title
Disorder induced bands in first order Raman spectra of carbon nanowalls
Author
Wang, Haomin ; Wu, Yihong ; Choong, Catherine Kai Shin ; Zhang, Jun ; Teo, Kie Leong ; Ni, Zhenhua ; Shen, Zexiang
Volume
1
fYear
2006
fDate
17-20 June 2006
Firstpage
219
Lastpage
222
Abstract
Raman spectra of carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition were analyzed. A typical Raman spectrum of carbon nanowalls exhibits three main bands, i.e., the G, D and D’ bands centered at about 1580, 1350 and 1620 cm-1, respectively. The peak intensity ratio of D to G band (ID /IG ) was found to be strongly influenced by edge length density of carbon nanowalls, suggesting that the strong D band is originated from the defects at the edges. The addition of water during the growth process increased the defects formed by water assisted oxidization which in turn, resulted in the increase of the D band’s relative intensity.
Keywords
Carbon nanowalls; Raman scattering; defects; edge effect; Chemical vapor deposition; Crystallization; Data engineering; Drives; Nanotubes; Organic materials; Physics; Plasma chemistry; Plasma measurements; Raman scattering; Carbon nanowalls; Raman scattering; defects; edge effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247613
Filename
1717063
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