Title :
Role of CU in TDDB of Low-K Dielectrics
Author :
Lloyd, J.R. ; Ponoth, S. ; Liniger, E. ; Cohen, S.
Author_Institution :
IBM TJ Watson Res. Center, Yorktown Heights, NY
Abstract :
The role of Cu in the time dependent dielectric breakdown (TDDB) performance of Cu/low-k integrated systems was studied. Interdigitated comb capacitors with and without Cu incorporated in the structure were temperature bias stressed (BTS). The Cu containing structures failed in a fraction of the time of the Cu-free samples. Annealing for 1200+ hours without bias did not change the failure times as compared to a 5 minute anneal, indicating that diffusion of neutral Cu does not play a role in TDDB. The results can be attributed to field enhanced Cu diffusion in the framework of an "impact damage" TDDB failure model
Keywords :
copper; dielectric materials; electric breakdown; metallisation; reliability; 5 mins; BEOL reliability; Cu; impact damage; interdigitated comb capacitors; low-k dielectrics; temperature bias stress; time-dependent dielectric breakdown; Annealing; Capacitors; Couplings; Dielectric breakdown; Electrons; Joining processes; Life testing; Metallization; Performance evaluation; Temperature; BEOL Reliability; Cu metallization; TDDB; low-k dielectrics;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369924
