• DocumentCode
    2783646
  • Title

    Intersubband transition of AlN/GaN quantum wells in optimized AlN-based waveguide structure

  • Author

    Shimizu, T. ; Kumtornkittikul, C. ; Iizuka, N. ; Sugiyama, M. ; Nakano, Y.

  • Author_Institution
    Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, 153-8904, Japan
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We achieved low-power saturation of intersubband absorption at 1.5 ¿m with AlN-based AlN/GaN quantum wells. By optimizing the etching condition of waveguides, the saturation energy was reduced by a factor of 3.
  • Keywords
    Absorption; Communication switching; Epitaxial layers; Etching; Gallium nitride; Optical waveguides; Propagation losses; Quantum well devices; Switches; Waveguide transitions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2007. QELS '07
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/QELS.2007.4431094
  • Filename
    4431094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2783646