Title :
A general and reliable model for GaN HEMTs on Si and SiC substrates
Author :
Jarndal, Anwar ; Essaadali, Riadh ; Kouki, Ammar
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Sharjah, Sharjah, United Arab Emirates
Abstract :
In this paper a reliable and cost-effective modeling approach for GaN HEMT on both Si and SiC substrates is presented. The developed model is validated in terms of small-and large-signal simulations for 2-mm GaN-on-Si and 1-mm GaN-on-SiC HEMTs.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; GaN; HEMT; SiC; cost-effective modeling approach; general model reliability; high electron mobility transistors; size 2 mm; substrates; Capacitance; Capacitance measurement; Gallium nitride; HEMTs; Optical wavelength conversion; Reliability; Scattering parameters; Active devices Modeling; GaN HEMT; Parameters extraction;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2015 IEEE 16th Annual
Conference_Location :
Cocoa Beach, FL
DOI :
10.1109/WAMICON.2015.7120400
