DocumentCode
2783838
Title
Light absorption enhanced structure of thin film silicon solar cell
Author
Park, Sungjin ; Kim, Beomjun ; Jin, Haifeng ; Keum, Changmin ; Heo, Yangwook ; Bae, Byung Seong
Author_Institution
Dept. of Display Eng., Hoseo Univ., Asan, South Korea
fYear
2010
fDate
20-25 June 2010
Abstract
In this paper, the stack structure of hydrogenated amorphous silicon thin film solar cell for the enhanced light absorption was studied. The way to increase light absorption of PIN solar cell was investigated. As increasing of the light absorption, we can obtain higher efficiency of the thin film solar cell. We suggested a structure which achieves long light traveling path even with thin amorphous silicon layer.
Keywords
amorphous semiconductors; elemental semiconductors; light absorption; semiconductor thin films; silicon; solar cells; PIN solar cell; amorphous layer; hydrogenated amorphous silicon thin film solar cell; light absorption; Anodes; Hafnium; Optical device fabrication; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5617019
Filename
5617019
Link To Document