Title :
High-Resolution Characterization of Ultra-Shallow Junctions by Scanning Spreading Resistance Microscopy
Author :
Zhang, Li ; Adachi, Kanna ; Tanimoto, Hiroyoshi ; Nishiyama, A.
Author_Institution :
Corporate Res. & Dev. Center, Toshiba Corp.
Abstract :
The SSRM in vacuum is proven to have sufficiently high spatial resolution for 2D profiling of ultra-shallow junctions of ~10 nm. An extremely small effective probe radius of 0.5 nm has been shown to be available with our SSRM systems. Halo distribution influence on roll-off characteristics has been directly observed. SSRM has been shown to have great potential for 2D characterization of next-generation CMOS devices and other nanostructures.
Keywords :
CMOS integrated circuits; MOSFET; nanostructured materials; 2D profiling; MOSFET; halo distribution; high-resolution characterization; nanostructures; next-generation CMOS devices; scanning spreading resistance microscopy; ultra-shallow junctions; Atomic force microscopy; CMOS technology; CMOSFETs; Circuits; Laboratories; Large scale integration; MOSFETs; Pollution measurement; Probes; Spatial resolution;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369944
