• DocumentCode
    2783858
  • Title

    Dual-Phase Line-Based QCA Memory Design

  • Author

    Taskin, Baris ; Hong, Bo

  • Author_Institution
    Department of Electrical and Computer Engineering, Drexel University, Philadelphia, PA 19104, Email: taskin@coe.drexel.edu
  • Volume
    1
  • fYear
    2006
  • fDate
    17-20 June 2006
  • Firstpage
    302
  • Lastpage
    305
  • Abstract
    This paper describes a line-based, parallel-access QCA memory design that is synchronized by a dual-phase clocking scheme. In line-based QCA memories, data bits are stored propagating along acyclic QCA lines and additional clock generators are used to create the clocking zones of the memory regions. The memory design proposed in this paper requires an easy-to-implement, dual-phase clocking scheme. Dual-phase clocking is implemented with two clock phases which have the same duty cycle and are phase-shifted by half a clock cycle, thus, requiring only one additional clock generator. The number of clock zones per memory cell is reduced to a minimum of two, permitting denser memory implementations.
  • Keywords
    Assembly; CMOS technology; Clocks; Logic devices; Memory architecture; Nanoscale devices; Quantum cellular automata; Quantum dots; Signal design; Synchronization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
  • Print_ISBN
    1-4244-0077-5
  • Type

    conf

  • DOI
    10.1109/NANO.2006.247635
  • Filename
    1717085