DocumentCode
2783858
Title
Dual-Phase Line-Based QCA Memory Design
Author
Taskin, Baris ; Hong, Bo
Author_Institution
Department of Electrical and Computer Engineering, Drexel University, Philadelphia, PA 19104, Email: taskin@coe.drexel.edu
Volume
1
fYear
2006
fDate
17-20 June 2006
Firstpage
302
Lastpage
305
Abstract
This paper describes a line-based, parallel-access QCA memory design that is synchronized by a dual-phase clocking scheme. In line-based QCA memories, data bits are stored propagating along acyclic QCA lines and additional clock generators are used to create the clocking zones of the memory regions. The memory design proposed in this paper requires an easy-to-implement, dual-phase clocking scheme. Dual-phase clocking is implemented with two clock phases which have the same duty cycle and are phase-shifted by half a clock cycle, thus, requiring only one additional clock generator. The number of clock zones per memory cell is reduced to a minimum of two, permitting denser memory implementations.
Keywords
Assembly; CMOS technology; Clocks; Logic devices; Memory architecture; Nanoscale devices; Quantum cellular automata; Quantum dots; Signal design; Synchronization;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247635
Filename
1717085
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