DocumentCode :
2783933
Title :
Fabrication and chrarcterization silicon thin film solar cells deposited by HF-PECVD
Author :
Lien, Shui-Yang ; Ou, Yu-Chih ; Cho, Yun-Shao ; Wang, Chao-Chun ; Chen, Chia-Fu ; Sun, Wen-Ching ; Wuu, Dong-Sing
Author_Institution :
Dept. of Mater. Sci. & Eng., MingDao Univ., ChungHua, Taiwan
fYear :
2010
fDate :
20-25 June 2010
Abstract :
The high frequency plasma enhanced chemical vapor deposition (HF-PECVD) is a well applicable deposition technique for large area and high rate deposition for silicon thin film solar cell application. This paper presents the properties of hydrogenated amorphous silicon (a-Si:H) films and high efficiency of p-i-n solar cells prepared using RF (27.1 MHz) excitation frequency. The influence of the power (10-40 W) and pressure (20-50 Pa) used during the deposition of absorber layers in p-i-n solar cells using pure silane on the properties of the films and solar cells are investigated. We summarize the power and pressure effect on properties and growth mechanism of a-Si:H films. It was found that the a-Si:H films prepared under various deposition conditions show widely various deposition rate, optical-electronic properties and microstructure. AZO films between two layers (n-layer and metal), the AZO back reflector was successfully implemented in a-Si:H singlejunction solar cells. After optimizing the deposition parameters, the amorphous silicon based thin film silicon solar cells with efficiency of 9.15 % have been fabricated by HF-PECVD. These are very encouraging results for future fabrication of high efficiency thin film solar cells using by HF-PECVD.
Keywords :
amorphous semiconductors; plasma CVD; semiconductor thin films; silicon; solar cells; RF excitation frequency; Si; high frequency plasma enhanced chemical vapor deposition; hydrogenated amorphous silicon; optical-electronic properties; p-i-n solar cells; silicon thin film solar cells; Electrodes; Films; Metals; PIN photodiodes; Photovoltaic cells; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5617024
Filename :
5617024
Link To Document :
بازگشت