Title :
A Highly Reliable FRAM (Ferroelectric Random Access Memory)
Author :
Kim, J.H. ; Jung, D.J. ; Kang, Y.M. ; Kim, H.H. ; Jung, W.W. ; Kang, J.Y. ; Lee, E.S. ; Kim, H. ; Jung, J.Y. ; Kang, S.K. ; Hong, Y.K. ; Kim, S.Y. ; Koh, H.K. ; Choi, D.Y. ; Park, J.H. ; Lee, S.Y. ; Jeong, H.S. ; Kim, K.
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin
Abstract :
64 Mb FRAM with 1T1C (one-transistor and one-capacitor) cell architecture has progressed greatly for a robust level of reliability. Random-single-bits appeared from package-level tests are attributed mostly to extrinsic origins (e.g. interconnection failures) rather than intrinsic ones. The extrinsic failures can be linked to two activation energies: while one is 0.27 eV originated from oxygen-vacancy movements at the top interface and grain boundary in the ferroelectric films, the other is 0.86 eV caused by imperfection in either the top-electrode contact (TEC), or the bottom-electrode contact (BEC), or both, of the cell capacitor. As a result of applying novel schemes to remove the analyzed defectives, we have the FRAM with no bit failure up to 1000 hours over both high-temperature-operating-life (HTOL) and high-temperature-storage (HTS) tests
Keywords :
electrical contacts; ferroelectric storage; ferroelectric thin films; grain boundaries; memory architecture; random-access storage; 0.27 eV; 0.86 eV; 64 Mbit; activation energies; bottom-electrode contact; cell capacitor; ferroelectric films; ferroelectric random access memory; grain boundary; high-temperature-operating-life; high-temperature-storage tests; one-transistor and one-capacitor cell architecture; oxygen-vacancy movements; package-level tests; random-single-bits; reliable FRAM; top-electrode contact; Capacitors; Failure analysis; Ferroelectric films; Ferroelectric materials; Grain boundaries; Nonvolatile memory; Packaging; Random access memory; Robustness; Testing;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369950
