DocumentCode :
2784055
Title :
Numerical simulation and experimental investigation of a-Si/a-SiGe tandem junction solar cells
Author :
Fan, Qi Hua ; Liao, Xianbo ; Chen, Changyong ; Xiang, Xianbi ; Hou, Guofu ; Ingler, William ; Adiga, Nirupama ; Zhang, Shibin ; Du, Wenhui ; Cao, Xinmin ; Deng, Xunming
Author_Institution :
Dept of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
This paper reports numerical modeling and experimental investigation of a-Si/a-SiGe tandem junction solar cells, based on a field-aided collection model. The performances of the composed a-Si/a-SiGe tandem cells could be predicted from the numerical modeling and experimental photovoltaic parameters of the component cells. An optimized choice for the tandem cells has been proposed by the aid of numerical simulation and verified by experimental results for the cases of a fixed a-Si top cell or a fixed a-SiGe bottom cell, respectively. It is found that 1) the highest efficiency (~13%) of the tandem cells can be achieved with a certain mismatch in Jsc between the top and bottom cells; 2) a small amount of Ge can be incorporated into a-Si based top cells to obtain an optimized current match with the bottom cell; 3) the Jsc of the simulated tandem solar cells is always a little greater, rather than exactly equal to the limiting Jsc of the component cells.
Keywords :
Ge-Si alloys; numerical analysis; solar cells; field-aided collection model; numerical modeling; tandem junction solar cells; Fluid flow; Junctions; Limiting; Photovoltaic cells; Photovoltaic systems; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5617031
Filename :
5617031
Link To Document :
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