DocumentCode
2784176
Title
ESD Testing of Aluminum and Copper Vertical Parallel plate (VPP) Capacitor Structures
Author
Voldman, Steven H. ; Gebreselasie, Ephrem G. ; He, Zhong-Xiang
Author_Institution
IBM Microelectron., Essex Junction, VT
fYear
2007
fDate
15-19 April 2007
Firstpage
586
Lastpage
587
Abstract
Vertical parallel plate (VPP) capacitor elements are being used in RF components for RF CMOS and RF BiCMOS technologies. ESD robustness evaluation of the VPP capacitor is very important for RF applications when these elements are used on the input pads of RF receiver networks. In this paper, the first ESD measurements of VPP structures are shown for the first time. The purpose of the work is to evaluate the electrical response of the VPP structure for HBM, and transmission line pulse (TLP) waveforms. In addition, new discoveries are disclosed with aluminum and copper vertical parallel plate capacitor elements.
Keywords
aluminium; capacitors; copper; electron device testing; electrostatic discharge; Al; Cu; ESD measurements; ESD testing; aluminum vertical parallel plate capacitor structures; copper vertical parallel plate capacitor structures; transmission line pulse waveforms; Aluminum; BiCMOS integrated circuits; CMOS technology; Capacitors; Copper; Electrostatic discharge; Radio frequency; Robustness; Testing; Transmission line measurements; Electrostatic discharge (ESD); Transmission Line Pulse (TLP); Vertical Parallel Plate (VPP) capacitors; Very Fast Transmission Line Pulse (VF-TLP);
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.369963
Filename
4227704
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