Title :
ESD Testing of Aluminum and Copper Vertical Parallel plate (VPP) Capacitor Structures
Author :
Voldman, Steven H. ; Gebreselasie, Ephrem G. ; He, Zhong-Xiang
Author_Institution :
IBM Microelectron., Essex Junction, VT
Abstract :
Vertical parallel plate (VPP) capacitor elements are being used in RF components for RF CMOS and RF BiCMOS technologies. ESD robustness evaluation of the VPP capacitor is very important for RF applications when these elements are used on the input pads of RF receiver networks. In this paper, the first ESD measurements of VPP structures are shown for the first time. The purpose of the work is to evaluate the electrical response of the VPP structure for HBM, and transmission line pulse (TLP) waveforms. In addition, new discoveries are disclosed with aluminum and copper vertical parallel plate capacitor elements.
Keywords :
aluminium; capacitors; copper; electron device testing; electrostatic discharge; Al; Cu; ESD measurements; ESD testing; aluminum vertical parallel plate capacitor structures; copper vertical parallel plate capacitor structures; transmission line pulse waveforms; Aluminum; BiCMOS integrated circuits; CMOS technology; Capacitors; Copper; Electrostatic discharge; Radio frequency; Robustness; Testing; Transmission line measurements; Electrostatic discharge (ESD); Transmission Line Pulse (TLP); Vertical Parallel Plate (VPP) capacitors; Very Fast Transmission Line Pulse (VF-TLP);
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369963