Title :
Leakage Suppression of Low Voltage Transient Voltage Suppressor
Author :
Dai, Sheng-Huei ; Wang, Hai-Ning ; Chiang, Ming-Tai ; Lin, Chrong-Jung ; King, Ya-Chin
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing-Hua Univ., Hsin-Chu
Abstract :
In this work, both the blanket implanted and LOCOS diodes have obvious effect on reducing the electric field at junction edge. The leakage at low biased voltage is lowered. The LOCOS diode further enhances sharpness of I-V characteristics. Besides, no extra lithography process is needed for the process of the LOCOS diodes. The LOCOS diodes would be a simple, low cost, and effective method for improving the performance of low voltage transient suppressor
Keywords :
ion implantation; oxidation; semiconductor diodes; surge protection; I-V characteristics; LOCOS diodes; blanket implantation; leakage suppression; transient voltage suppressor; Breakdown voltage; Current density; Doping; Fabrication; Implants; Leakage current; Low voltage; Semiconductor diodes; Stress; Surges;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369966
