DocumentCode
2784220
Title
Leakage Suppression of Low Voltage Transient Voltage Suppressor
Author
Dai, Sheng-Huei ; Wang, Hai-Ning ; Chiang, Ming-Tai ; Lin, Chrong-Jung ; King, Ya-Chin
Author_Institution
Inst. of Electron. Eng., Nat. Tsing-Hua Univ., Hsin-Chu
fYear
2007
fDate
15-19 April 2007
Firstpage
592
Lastpage
593
Abstract
In this work, both the blanket implanted and LOCOS diodes have obvious effect on reducing the electric field at junction edge. The leakage at low biased voltage is lowered. The LOCOS diode further enhances sharpness of I-V characteristics. Besides, no extra lithography process is needed for the process of the LOCOS diodes. The LOCOS diodes would be a simple, low cost, and effective method for improving the performance of low voltage transient suppressor
Keywords
ion implantation; oxidation; semiconductor diodes; surge protection; I-V characteristics; LOCOS diodes; blanket implantation; leakage suppression; transient voltage suppressor; Breakdown voltage; Current density; Doping; Fabrication; Implants; Leakage current; Low voltage; Semiconductor diodes; Stress; Surges;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.369966
Filename
4227707
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