DocumentCode
2784238
Title
Testing for Threshold Logic Circuits Based on Resonant Tunneling Diodes
Author
Kuang, Weidong ; Banatoski, Edward
Author_Institution
Department of Electrical Engineering, University of Texas — Pan American, Edinburg, TX 78541, U.S.A., Email: kuangw@panam.edu
Volume
1
fYear
2006
fDate
17-20 June 2006
Firstpage
387
Lastpage
390
Abstract
This paper proposes comprehensive fault models to accommodate the typical manufacturing defects in resonant tunneling diode (RTD) threshold logic integrated circuits. The defects, such as device (field-effect transistor or RTD) short or open, can be modeled as conditional stuck-at fault models. The errors due to the RTD size variations are abstracted as threshold-change fault models. A testing methodology based on the proposed fault models is presented.
Keywords
RTD; fault model; testing; Circuit faults; Circuit testing; Diodes; Integrated circuit manufacture; Integrated circuit modeling; Logic circuits; Logic testing; Pulp manufacturing; Resonant tunneling devices; Virtual manufacturing; RTD; fault model; testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247658
Filename
1717108
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