25V ESD NPN Transistor Optimized by Distributed Emitter Ballasting using Emitter Contact Area Segmentation

Author

Denison, Marie ; Murtaza, Suhail ; Steinhoff, Robert ; Merchant, Steve ; Pendharkar, Sameer ; Bychikhin, Sergey ; Pogany, Dionyz

Author_Institution

Texas Instruments, Inc., Dallas, TX

fYear

2007

fDate

15-19 April 2007

Firstpage

604

Lastpage

605

Abstract

A 25 V ESD NPN transistor is made high current capable by means of distributed emitter ballasting. The proposed segmentation of the emitter contact area along the width offers an efficient way to extend the homogeneous current regime without causing any significant increase of the holding voltage. At high current, a second snap-back is observed in the TLP current-voltage characteristics. Transient interferometric mapping analyses show that this voltage drop is due to current filamentation arising at a time decreasing with increasing current amplitude

Keywords

electrical contacts; electrostatic discharge; power transistors; 25 V; ESD NPN transistor; current-voltage characteristics; distributed emitter ballasting; electrostatic discharges; emitter contact area segmentation; transient interferometric mapping analyses; Electronic ballasts; Electrostatic discharge; Electrostatic interference; Leakage current; Pulse measurements; Robustness; Space technology; Testing; Transient analysis; Voltage; Bipolar; ESD; NPN; TLP; Transient Interferometric Mapping; smart power;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Conference_Location

Phoenix, AZ

Print_ISBN

1-4244-0919-5

Electronic_ISBN

1-4244-0919-5

Type

conf

DOI

10.1109/RELPHY.2007.369972

Filename

4227713