Title :
Microwave and millimeter wave power amplifiers: Technology, applications, benchmarks, and future trends
Author :
Komiak, James J.
Author_Institution :
Global Eng., BAE Syst. Electron. Syst., Nashua, NH, USA
Abstract :
Solid State Transistor Device Technology is ubiquitous in communications, radar, electronic warfare, and instrumentation applications. This abridged presentation will cover Si LDMOS, PHEMT, InP HEMT/MHEMT and GaN HEMT. Content includes principles of operation, structures, characteristics, classes of operation, and device state of the art benchmarks. The art of power amplifier design is approached from a historical perspective. Power amplifiers utilizing these device technologies covering UHF through sub-millimeter wave are described including amplifier state of the art benchmarks. Future trends are highlighted and summarized.
Keywords :
III-V semiconductors; MOSFET; elemental semiconductors; gallium compounds; high electron mobility transistors; indium compounds; microwave power amplifiers; millimetre wave power amplifiers; silicon; GaN; GaN HEMT; InP; InP HEMT-MHEMT; PHEMT; Si; Si LDMOS; UHF; microwave power amplifiers; millimeter wave power amplifiers; power amplifier design; solid state transistor device technology; sub-millimeter wave; Gallium nitride; III-V semiconductor materials; Indium phosphide; MMICs; Microwave amplifiers; PHEMTs; microwave; millimeter wave; power amplifier; solid state;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2015 IEEE 16th Annual
Conference_Location :
Cocoa Beach, FL
DOI :
10.1109/WAMICON.2015.7120433
