Title :
Leakage Current Characteristic of Pre-Damaged Interlayer Dielectric During Voltage Ramp Method
Author :
Hwang, Sang-Soo ; Jung, Sung-Yup ; Joo, Young-Chang
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ.
Abstract :
In order to investigate the effects of Cu ions migration under BTS, VRDB tests were conducted on the pre-damaged samples. From the various VRDB tests on intrinsic and extrinsic system, migrated Cu ion from electrode plays a role of PF trap site. Since the migration of Cu ions is faster than the formation of intrinsic defects, TTF is set by the migration of Cu ions in extrinsic system.
Keywords :
copper; dielectric materials; leakage currents; thermal stresses; Cu; Cu ion migration; VRDB tests; bias temperature stress; leakage current characteristic; pre-damaged interlayer dielectric; voltage ramp method; Breakdown voltage; Dielectric breakdown; Electric breakdown; Electrodes; Electrons; Leakage current; Materials science and technology; Performance evaluation; Stress; System testing;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369984
