• DocumentCode
    2784530
  • Title

    Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well

  • Author

    Mu, Xiaodong ; Ding, Yujie J. ; Ooi, Boon S. ; Hopkinson, Mark

  • Author_Institution
    Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.
  • Keywords
    Excitons; Gallium arsenide; Indium gallium arsenide; Photoluminescence; Quantum computing; Quantum dot lasers; Quantum dots; Radiative recombination; Temperature; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2007. QELS '07
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/QELS.2007.4431146
  • Filename
    4431146
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2784530