DocumentCode
2784572
Title
Test Structure Design for Precise Understanding of Cu/Low-k Dielectric Reliability
Author
Tan, T.L. ; Gan, C.L. ; Du, A.-Y. ; Cheng, C.K. ; Ng, C.M. ; Chan, L.
Author_Institution
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ.
fYear
2007
fDate
15-19 April 2007
Firstpage
632
Lastpage
633
Abstract
Single line test structures are suggested for failure analysis and reliability improvement development, apart from using the conventional comb test structures. This is due to the challenges in controlling the damage after electrical tests as well as in pin-pointing sub-surface failures with present techniques. Three failure modes were observed in the new test structure, which can be identified by its I-V leakage characteristics. These also demonstrate the importance of including different geometrical layouts for backend reliability characterization
Keywords
copper; low-k dielectric thin films; reliability; Cu; Cu/low-k dielectric reliability; comb test structures; current-voltage leakage characteristics; electrical tests; failure analysis; test structure design; Anodes; Delamination; Dielectric breakdown; Electric breakdown; Failure analysis; Leakage current; Materials science and technology; Materials testing; Semiconductor device testing; Voltage; Ta ion diffusion; carbon-doped low-k dielectric; delamination; single line test structure;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.369986
Filename
4227727
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