• DocumentCode
    2784572
  • Title

    Test Structure Design for Precise Understanding of Cu/Low-k Dielectric Reliability

  • Author

    Tan, T.L. ; Gan, C.L. ; Du, A.-Y. ; Cheng, C.K. ; Ng, C.M. ; Chan, L.

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ.
  • fYear
    2007
  • fDate
    15-19 April 2007
  • Firstpage
    632
  • Lastpage
    633
  • Abstract
    Single line test structures are suggested for failure analysis and reliability improvement development, apart from using the conventional comb test structures. This is due to the challenges in controlling the damage after electrical tests as well as in pin-pointing sub-surface failures with present techniques. Three failure modes were observed in the new test structure, which can be identified by its I-V leakage characteristics. These also demonstrate the importance of including different geometrical layouts for backend reliability characterization
  • Keywords
    copper; low-k dielectric thin films; reliability; Cu; Cu/low-k dielectric reliability; comb test structures; current-voltage leakage characteristics; electrical tests; failure analysis; test structure design; Anodes; Delamination; Dielectric breakdown; Electric breakdown; Failure analysis; Leakage current; Materials science and technology; Materials testing; Semiconductor device testing; Voltage; Ta ion diffusion; carbon-doped low-k dielectric; delamination; single line test structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    1-4244-0919-5
  • Electronic_ISBN
    1-4244-0919-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.2007.369986
  • Filename
    4227727