Characterization of Electromigration Parameters on Single Device

The careful analysis of resistance evolution with time during electromigration tests provided valuable information about damascene architecture and intrinsic electromigration behavior. On one hand, void length and barrier resistivity can be extracted from the step height, but we have shown that it is sensitive to high accelerated tests. On the other hand, both the activation energy and the current density exponent can be calculated directly from the slope of the progressive increase, on a single device. Such methodology is likely to increase accuracy on Black´s parameters.