DocumentCode
2784648
Title
Hybrid Grain-Continuum Model for Thermo-Mechanical Stresses in Polycrystalline Cu 3D IC Vias
Author
Bloomfield, M.O. ; Bentz, D.N. ; Sukharev, V. ; Cale, T.S.
Author_Institution
Rensselaer Polytech. Inst., Troy, NY
fYear
2007
fDate
15-19 April 2007
Firstpage
644
Lastpage
645
Abstract
We introduce an approach to compute stresses in structures in which grain structures are important. The approach is a hybrid of continuum representations and 3D ´grain-continuum´ (GC) models; i.e., models in which grain boundaries are represented and tracked. Stresses due to temperature changes in 3D IC vias are used as to demonstrate our approach. We focus on determining how large the GC region needs to be; that is, how much the computations can be simplified.
Keywords
copper; grain boundaries; integrated circuit interconnections; Cu; grain boundaries; hybrid grain-continuum model; polycrystalline Cu 3D IC vias; thermo-mechanical stresses; Electromigration; Finite element methods; Grain boundaries; Integrated circuit modeling; Mechanical factors; Temperature; Thermal stresses; Thermomechanical processes; Three-dimensional integrated circuits; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.369992
Filename
4227733
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