Title :
Hybrid Grain-Continuum Model for Thermo-Mechanical Stresses in Polycrystalline Cu 3D IC Vias
Author :
Bloomfield, M.O. ; Bentz, D.N. ; Sukharev, V. ; Cale, T.S.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY
Abstract :
We introduce an approach to compute stresses in structures in which grain structures are important. The approach is a hybrid of continuum representations and 3D ´grain-continuum´ (GC) models; i.e., models in which grain boundaries are represented and tracked. Stresses due to temperature changes in 3D IC vias are used as to demonstrate our approach. We focus on determining how large the GC region needs to be; that is, how much the computations can be simplified.
Keywords :
copper; grain boundaries; integrated circuit interconnections; Cu; grain boundaries; hybrid grain-continuum model; polycrystalline Cu 3D IC vias; thermo-mechanical stresses; Electromigration; Finite element methods; Grain boundaries; Integrated circuit modeling; Mechanical factors; Temperature; Thermal stresses; Thermomechanical processes; Three-dimensional integrated circuits; Wafer bonding;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369992