DocumentCode
2784665
Title
The effect of initiatory electrons on breakdown characteristics in highly nonuniform gap
Author
Qiu, X.Q. ; Chalmers, I.D.
Author_Institution
Centre for Electr. Power Eng., Strathclyde Univ., Glasgow, UK
Volume
2
fYear
1996
fDate
16-19 Jun 1996
Firstpage
787
Abstract
Previous work has shown that the positive impulse breakdown voltage of SF6, N2 and SF6/N2 mixture in a point-plane gap is affected by the presence of space charge. With negative DC bias voltage on a corona needle arrangement external to the test gap, the impulse breakdown strength decreases significantly. This phenomenon has little to do with the electronegative properties of gases, since the same result is found in both electron-attaching and nonattaching gases. The reason was supposed to be the abundance of initiatory electrons resulting from detachment of plentiful negative ions injected. The aim of the present work is to confirm the above explanation. Experiments were carried out in air, SF6 and an SF6/N2 mixture both with and without irradiation. The results show that with either artificial irradiation or a negative DC bias voltage, the impulse breakdown strength decreases. The present experimental results confirmed to a large extend that the breakdown strength of a nonuniform field gap is greatly affected by the availability of initiatory electrons within the gap volume
Keywords
SF6 insulation; air insulation; corona; electric breakdown; electric strength; impulse testing; insulation testing; nitrogen; radiation effects; N2; SF6; SF6-N2; SF6/N2 mixture; air; artificial irradiation; breakdown characteristics; corona needle arrangement; gaseous insulation breakdown testing; highly nonuniform gap; impulse breakdown strength; initiatory electrons; negative DC bias voltage; point-plane gap; positive impulse breakdown voltage; Breakdown voltage; Corona; Electric breakdown; Electrodes; Electrons; Gases; Impulse testing; Needles; Space charge; Sulfur hexafluoride;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation, 1996., Conference Record of the 1996 IEEE International Symposium on
Conference_Location
Montreal, Que.
ISSN
1089-084X
Print_ISBN
0-7803-3531-7
Type
conf
DOI
10.1109/ELINSL.1996.549462
Filename
549462
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