Title :
Influence of Surface Cleaning on Stressvoiding and Electromigration of Cu Damascene Interconnection
Author :
Wang, Jen-Pan ; Su, Yan-Kuin ; Chen, Jone F.
Author_Institution :
Dept. of Electr. Eng., National Cheng Kung Univ., Tainan
Abstract :
This paper is to study the influence of Cu surface clean process on stressvoiding and electromigration of Cu dual damascene metallization. A superior Cu pre-cleaning process condition is developed to improve Cu stress-induced voiding (SIV) and electromigration (EM). Higher pre-clean bias-power and shorter pre-clean time demonstrate remarkable low via resistance and excellent Cu reliability performance.
Keywords :
copper; electromigration; integrated circuit interconnections; integrated circuit reliability; surface cleaning; Cu; Cu damascene interconnection; Cu stress-induced voiding; electromigration; stressvoiding; surface cleaning; Argon; CMOS technology; Copper; Dielectrics; Electromigration; Surface cleaning; Surface resistance; Testing; Thermal stability; Thermal stresses; dual damascene; electromigration (EM); stress-induced voiding (SIV); stressmigration (SM); stressvoiding (SV);
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369993
