Title :
Effect of Interface Buffer Layer on the Reliability of Ultra-Thin MgO Magnetic Tunnel Junctions for Spin Transfer Switching MRAM
Author :
Hosotani, Keiji ; Asao, Yoshiaki ; Nagamine, Makoto ; Ueda, Tomomasa ; Aikawa, Hisanori ; Shimomura, Naoharu ; Ikegawa, Sumio ; Kajiyama, Takeshi ; Takahashi, Shigeki ; Nitayama, Akihiro ; Yoda, Hiroaki
Author_Institution :
Center for Semicond. Res. & Dev., Toshiba Corp., Yokohama
Abstract :
Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.
Keywords :
boron compounds; cobalt compounds; integrated circuit reliability; iron compounds; magnesium compounds; magnetic tunnelling; magnetoresistive devices; random-access storage; CoFeB-MgO-CoFeB; interface buffer layer; magnetoresistive random access memory; spin transfer switching MRAM; ultra-thin magnetic tunnel junctions; Buffer layers; Electric breakdown; Magnetic field measurement; Magnetic switching; Magnetic tunneling; Random access memory; Semiconductor device reliability; Stress; Testing; Tunneling magnetoresistance;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369995
