Improving the Endurance Characteristics Through Boron Implant at Active Edge in 1 G NAND Flash

Author

Kang, Daewoong ; Chang, Sungnam ; Seo, Seunggun ; Song, Yongwook ; Yoon, Hojin ; Lee, Eunjung ; Chang, Dongwon ; Lee, Wonseong ; Park, Byung-Gook ; Lee, Jong Duk ; Park, Il Han ; Kang, Sangwoo ; Shin, Hyungcheol

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ.

fYear

2007

fDate

15-19 April 2007

Firstpage

652

Lastpage

653

Abstract

One of the most important issues of NAND flash memory is reliability problems caused by oxide and interface traps. But it has been revealed that their generation rate increases by Fowler-Nordheim current stressing on the tunnel oxide as the channel width of shallow trench isolation (STI) isolated NAND flash cells shrinks and electric field is increased at active edge of STI profile. By adjusting the boron doping of active edge, we decrease not only the electric field but also the trap generation. Also we confirmed the improvement of endurance and bake retention characteristics.

Keywords

boron; flash memories; integrated circuit reliability; logic gates; Fowler-Nordheim current stressing; NAND flash memory; active edge; bake retention; boron implant; channel width; endurance characteristics; interface traps; oxide traps; shallow trench isolation; tunnel oxide; Boron; Capacitance; Degradation; Doping; Dry etching; Equations; Implants; Nonvolatile memory; Random access memory; Voltage; bake retentioin; boron; electric field; endurance; trap;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Conference_Location

Phoenix, AZ

Print_ISBN

1-4244-0919-5

Electronic_ISBN

1-4244-0919-5

Type

conf

DOI

10.1109/RELPHY.2007.369996

Filename

4227737