ZnO Nanowire Field-Effect Transistors: Ozone-Induced Threshold Voltage Shift and Multiple Nanowire Effects

Author

Ju, Sanghyun ; Lee, Kangho ; Janes, David B. ; Li, Jianye ; Chang, R.P.H. ; Yoon, Myung-Han ; Facchetti, Antonio ; Marks, Tobin J.

Author_Institution

School of Electrical and Computer Engineering, The Institute for Nanoelectronics and Computing, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA

Volume

2

fYear

2006

fDate

17-20 June 2006

Firstpage

445

Lastpage

448

Abstract

ZnO nanowire field-effect transistors (NW-FETs) employing single nanowires were fabricated, using a self-assembled superlattice (SAS) as the gate insulator. Both depletion-mode and enhancement-mode ZnO NW-FETs were fabricated and characterized. An electrostatic model is proposed to describe observed threshold voltage shift upon optimum ozone treatment. Temperature-dependent current-voltage characteristics of depletion-mode ZnO NW-FETs verify this model, indicating the existence of body current through ZnO nanowires with low activation energy. In addition, NW-FETs that use multiple ZnO nanowires and a SiO2gate insulator were fabricated to achieve higher on-current without significant degradation in on-off current ratio, threshold voltage shift, and subthreshold slopes.

Keywords

Body current; Multiple nanowires; Schottky barrier; ZnO; Current-voltage characteristics; Degradation; Electrostatics; FETs; Insulation; Self-assembly; Superlattices; Synthetic aperture sonar; Threshold voltage; Zinc oxide; Body current; Multiple nanowires; Schottky barrier; ZnO;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on

Print_ISBN

1-4244-0077-5

Type

conf

DOI

10.1109/NANO.2006.247683

Filename

1717133