DocumentCode
2784755
Title
Single-crystalline ZnO nanowires grown on silicon wafers
Author
Konenkamp, R. ; Word, R. ; Dosmailov, M.
Author_Institution
Physics Department, Portland State University, 1719 SW 10th Avenue, Portland, OR 97201, USA
Volume
2
fYear
2006
fDate
17-20 June 2006
Firstpage
449
Lastpage
452
Abstract
We report electrodeposition of single-crystalline ZnO nanowires on Si wafers. Similar wires grown on conductive SnO2 /glass substrates show excellent electro-luminescence with visible and ultra-violet spectral contributions. For high doping levels in the n-type Si substrates high-quality nanowires can be grown. For low electron concentrations occurring in weakly n-type wafers or in p-type wafers, nanowire growth is inhibited. For B-doped p-type samples the growth process can be improved by applying external bias light or more cathodic electrode potentials.
Keywords
ZnO on Si; electrodposition; luminescence; nanowire; Crystallization; Electrodes; Electrons; Glass; Nanowires; Optical films; Silicon; Substrates; Wires; Zinc oxide; ZnO on Si; electrodposition; luminescence; nanowire;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247684
Filename
1717134
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