• DocumentCode
    2784755
  • Title

    Single-crystalline ZnO nanowires grown on silicon wafers

  • Author

    Konenkamp, R. ; Word, R. ; Dosmailov, M.

  • Author_Institution
    Physics Department, Portland State University, 1719 SW 10th Avenue, Portland, OR 97201, USA
  • Volume
    2
  • fYear
    2006
  • fDate
    17-20 June 2006
  • Firstpage
    449
  • Lastpage
    452
  • Abstract
    We report electrodeposition of single-crystalline ZnO nanowires on Si wafers. Similar wires grown on conductive SnO2/glass substrates show excellent electro-luminescence with visible and ultra-violet spectral contributions. For high doping levels in the n-type Si substrates high-quality nanowires can be grown. For low electron concentrations occurring in weakly n-type wafers or in p-type wafers, nanowire growth is inhibited. For B-doped p-type samples the growth process can be improved by applying external bias light or more cathodic electrode potentials.
  • Keywords
    ZnO on Si; electrodposition; luminescence; nanowire; Crystallization; Electrodes; Electrons; Glass; Nanowires; Optical films; Silicon; Substrates; Wires; Zinc oxide; ZnO on Si; electrodposition; luminescence; nanowire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
  • Print_ISBN
    1-4244-0077-5
  • Type

    conf

  • DOI
    10.1109/NANO.2006.247684
  • Filename
    1717134